caa a22 4500 388075848 CHVBK 20180307125159.0 cr unu---uuuuu 161130e199909 xx s 000 0 eng 10.1557/S0883769400053045 doi S0883769400053045 pii (NATIONALLICENCE)cambridge-10.1557/S0883769400053045 Optoelectronic Properties and Applications of Rare-Earth-Doped GaN [Elektronische Daten] As discussed in the accompanying articles in this issue of MRS Bulletin, the optical properties of rare-earth (RE) elements have led to many important photonic applications, including solid-state lasers, components for telecommunications (optical-fiber amplifiers, fiber lasers), optical storage devices, and displays. In most of these applications, the host materials for the RE elements are various forms of oxide and nonoxide glasses. The emission can occur at visible or infrared (IR) wavelengths, depending on the electronic transitions of the selected RE element and the excitation mechanism. Until recently, the study of semiconductors doped with RE elements such as Pr and Er has concentrated primarily on the lowest excited state as an optically active transition. The presence of transitions at IR wavelengths (1.3 and 1.54 μm) that are coincident with minima in the optical dispersion and the loss of silica-based glass fibers utilized in telecommunications, combined with the prospect of integration with semiconductor device technology, has sparked considerable interest. The status and prospects of obtaining stimulated emission in Si:Er are reviewed by Gregorkiewicz and Langer in this issue and by Coffa et al. in a previous MRS Bulletin issue. While great progress is being made in enhancing the emission intensity of Er-doped Si, it still experiences significant loss in luminescence efficiency at room temperature, as compared with low temperatures. This thermal quenching was shown by Favennec et al. to de crease with the bandgap energy of the semiconductor. Hence wide-bandgap semiconductors (WBGSs) are attractive candidates for investigation as hosts for RE doping. Copyright © Materials Research Society 1999 Steckl A.J. Zavada J.M. MRS Bulletin Cambridge University Press 24/9(1999-09), 33-38 0883-7694 24:9<33 1999 24 MRS https://doi.org/10.1557/S0883769400053045 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S0883769400053045 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Steckl A.J. NATIONALLICENCE 700 1- Zavada J.M. NATIONALLICENCE 773 0- MRS Bulletin Cambridge University Press 24/9(1999-09), 33-38 0883-7694 24:9<33 1999 24 MRS CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge