caa a22 4500 38811472X CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000594 doi S1092578300000594 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000594 A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C [Elektronische Daten] We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C. Copyright © 1999 Materials Research Society Keywords: GaN nationallicence SiC nationallicence bipolar transistor nationallicence HBT nationallicence selective area growth nationallicence Torvik John T. Astralux Inc Leksono M. Astralux Inc Pankove J. I. Astralux Inc Van Zeghbroeck B. University of Colorado MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e3 1092-5783 4:1<e3 1999 4 MIJ https://doi.org/10.1557/S1092578300000594 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000594 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Torvik John T. Astralux Inc NATIONALLICENCE 700 1- Leksono M. Astralux Inc NATIONALLICENCE 700 1- Pankove J. I. Astralux Inc NATIONALLICENCE 700 1- Van Zeghbroeck B. University of Colorado NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e3 1092-5783 4:1<e3 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge