caa a22 4500 388114738 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000661 doi S1092578300000661 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000661 Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP) [Elektronische Daten] A new process for synthesis and bulk crystal growth of GaN is described. GaN single crystal c-plane platelets up to 9mm by 2mm by 100μm thick have been grown by the Chemical Vapor Reaction Process (CVRP). The reaction between gallium and a nitrogen precursor is produced by sublimation of solid ammonium chloride in a carrier gas, which passes over gallium at a temperature of approximately 900°C at near atmospheric pressures. Growth rates for the platelets were 25-100 μm/hr in the hexagonal plane. Seeded growth in the c-direction was also accomplished by re-growth on previously grown c-plane platelets. The crystals were characterized by X-ray diffractometry, atomic force microscopy, secondary ion mass spectrometry, inert gas fusion, and room temperature Hall effect and resistivity measurements. Copyright © 1999 Materials Research Society Keywords: GaN synthesis nationallicence substrates nationallicence crystal growth nationallicence platelets nationallicence Callahan M. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX Harris M. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX Suscavage M. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX Bliss D. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX Bailey J. Solid State Scientific Corp. MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e10 1092-5783 4:1<e10 1999 4 MIJ https://doi.org/10.1557/S1092578300000661 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000661 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Callahan M. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX NATIONALLICENCE 700 1- Harris M. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX NATIONALLICENCE 700 1- Suscavage M. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX NATIONALLICENCE 700 1- Bliss D. Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX NATIONALLICENCE 700 1- Bailey J. Solid State Scientific Corp NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e10 1092-5783 4:1<e10 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge