caa a22 4500 388114746 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000648 doi S1092578300000648 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000648 Growth and Device Performance of GaN Schottky Rectifiers [Elektronische Daten] Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB 2/RON, where VRB is the reverse breakdown voltage and RON is the on-resistance, was ~ 4.53 MW-cm−2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN. Copyright © 1999 Materials Research Society Gallium Nitride nationallicence MOCVD nationallicence Schottky diode rectifier nationallicence Chyi Jen-Inn Department of Electrical Engineering,National Central University,Taiwan Lee C. -M Department of Electrical Engineering,National Central University,Taiwan Chuo C.C. Department of Electrical Engineering,National Central University,Taiwan Chi G. C. Department of Physics, National Central University Dang G. T. Department of Chemical Engineering, University of Florida Zhang A. P. Department of Chemical Engineering, University of Florida Ren Fan Department of Chemical Engineering, University of Florida Cao X.A. Department of Materials Science and Engineering, University of Florida Pearton S.J. Department of Materials Science and Engineering, University of Florida Chu S. N. G. Bell Laboratories, Lucent Technologies Wilson R. G. Consultant,Stevenson Ranch,CA MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e8 1092-5783 4:1<e8 1999 4 MIJ https://doi.org/10.1557/S1092578300000648 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000648 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chyi Jen-Inn Department of Electrical Engineering,National Central University,Taiwan NATIONALLICENCE 700 1- Lee C. -M Department of Electrical Engineering,National Central University,Taiwan NATIONALLICENCE 700 1- Chuo C.C. Department of Electrical Engineering,National Central University,Taiwan NATIONALLICENCE 700 1- Chi G. C. Department of Physics, National Central University NATIONALLICENCE 700 1- Dang G. T. Department of Chemical Engineering, University of Florida NATIONALLICENCE 700 1- Zhang A. P. Department of Chemical Engineering, University of Florida NATIONALLICENCE 700 1- Ren Fan Department of Chemical Engineering, University of Florida NATIONALLICENCE 700 1- Cao X.A. Department of Materials Science and Engineering, University of Florida NATIONALLICENCE 700 1- Pearton S.J. Department of Materials Science and Engineering, University of Florida NATIONALLICENCE 700 1- Chu S. N. G. Bell Laboratories, Lucent Technologies NATIONALLICENCE 700 1- Wilson R. G. Consultant,Stevenson Ranch,CA NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e8 1092-5783 4:1<e8 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge