caa a22 4500 388114754 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000612 doi S1092578300000612 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000612 Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor [Elektronische Daten] Multiwafer Planetary Reactor is a promising system for large-scale production of heterostructures for LED's based on III-group nitrides. Analysis of chemical processes occurring in the reactor allows one to get insight into specific mechanisms governing growth of nitride based heterostructures. In the present paper results of modeling analysis of MOVPE of InxGa1−xN layers in AIX-200 Reactor and AIX 2000 HT Planetary Reactor are reported. The model used for MOVPE process analysis accounts for gas flow, heat transfer, and multicomponent mass transport along with gas phase and surface chemical reactions. Results of the modeling analysis of In transport and incorporation into the solid phase are compared with experimental data. It is shown that the model predicts reasonably well the In incorporation during MOVPE of InGaN under In/(In+Ga) ratio in the gas phase less than 20%. Copyright © 1999 Materials Research Society Keywords: MOVPE nationallicence InGaN nationallicence Planetary Reactor nationallicence indium nationallicence incorporation nationallicence Talalaev R. A. Ioffe Physical-Technical Institute Yakovlev E. V. Soft-Impact Ltd (St.Petersburg, Russia) Karpov S. Yu Soft-Impact Ltd (St.Petersburg, Russia) Makarov Yu. N. Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg Schoen O. AIXTRON AG Heuken M. AIXTRON AG Strauch G. AIXTRON AG Juergensen Holger AIXTRON AG MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e5 1092-5783 4:1<e5 1999 4 MIJ https://doi.org/10.1557/S1092578300000612 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000612 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Talalaev R. A. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Yakovlev E. V. Soft-Impact Ltd (St.Petersburg, Russia) NATIONALLICENCE 700 1- Karpov S. Yu Soft-Impact Ltd (St.Petersburg, Russia) NATIONALLICENCE 700 1- Makarov Yu. N. Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg NATIONALLICENCE 700 1- Schoen O. AIXTRON AG NATIONALLICENCE 700 1- Heuken M. AIXTRON AG NATIONALLICENCE 700 1- Strauch G. AIXTRON AG NATIONALLICENCE 700 1- Juergensen Holger AIXTRON AG NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e5 1092-5783 4:1<e5 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge