caa a22 4500 388114762 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000624 doi S1092578300000624 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000624 The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia [Elektronische Daten] The growth rate evolution versus V/III ratio and substrate temperature was studied by means of optical reflectivity during MBE of GaN layers using NH3 as nitrogen source. The GaN desorption becomes observable at temperatures above 800°C and causes the reduction of growth rate accompanied with the surface roughening at temperatures above 850-870°C. Unlike GaAs, which evaporates in accordance with the action mass law, the desorption rate of GaN is found to be almost independent of V/III ratio within the N-rich growth conditions. The activation energy for GaN desorption during the growth is found to be (3.2±0.1)eV. This value is very close to the activation energy for free evaporation. At V/III ratio values exceeding 200 the GaN growth rate reduction caused by violation of the molecular flow regime is observed. The Mg-doped samples grown under these extreme conditions tend to have improved acceptor activation and thus p-type conductivity. Copyright © 1999 Materials Research Society Keywords: GaN nationallicence MBE nationallicence ammonia cracking nationallicence V/III ratio nationallicence free evaporation nationallicence desorption rate nationallicence Alexeev A.N. ATC Semiconductor Devices Ltd. Borisov B.A. ATC Semiconductor Devices Ltd. Chaly V.P. ATC Semiconductor Devices Ltd. Demidov D.M. ATC Semiconductor Devices Ltd. Dudin A.L. ATC Semiconductor Devices Ltd. Krasovitsky D.M. ATC Semiconductor Devices Ltd. Pogorelsky Yu.V. ATC Semiconductor Devices Ltd. Shkurko A.P. ATC Semiconductor Devices Ltd. Sokolov I.A. ATC Semiconductor Devices Ltd. Stepanov M.V. ATC Semiconductor Devices Ltd. Ter-Martirosyan A.L. ATC Semiconductor Devices Ltd. MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e6 1092-5783 4:1<e6 1999 4 MIJ https://doi.org/10.1557/S1092578300000624 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000624 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Alexeev A.N. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Borisov B.A. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Chaly V.P. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Demidov D.M. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Dudin A.L. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Krasovitsky D.M. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Pogorelsky Yu.V. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Shkurko A.P. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Sokolov I.A. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Stepanov M.V. ATC Semiconductor Devices Ltd NATIONALLICENCE 700 1- Ter-Martirosyan A.L. ATC Semiconductor Devices Ltd NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e6 1092-5783 4:1<e6 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge