caa a22 4500 388114789 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000582 doi S1092578300000582 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000582 Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer [Elektronische Daten] Lateral epitaxial overgrowth (LEO) on Si(111) substrates using an AlN buffer layer is demonstrated and characterized using scanning electron microscopy, atomic force microscopy, transmission electron microscopy, x-ray diffraction, photoluminescence spectroscopy, and cathodoluminescence imaging. The <100>-oriented LEO GaN stripes grown on silicon substrates are shown to have similar structural properties as LEO GaN grown on GaN/Al2O3 substrates: the surface topography is characterized by continuous crystallographic steps rather than by steps terminated by screw-component threading dislocations; the density of threading dislocations is <106 cm−2; the LEO regions exhibit crystallographic tilt (0.7-4.7°) relative to the seed region. The AlN buffer thickness affects the stripe morphology and, in turn, the microstructure of the LEO GaN. The issues of chemical compability and thermal expansion mismatch are discussed. Copyright © 1999 Materials Research Society Keywords: gallium nitride nationallicence silicon substrate nationallicence metalorganic chemical nationallicence vapor deposition nationallicence transmission electron microscopy nationallicence atomic force microscopy nationallicence x-ray diffraction nationallicence cathodoluminescence nationallicence photoluminescence nationallicence thermal nationallicence expansion nationallicence Marchand H. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Zhang N. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Zhao L. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Golan Y. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Rosner S.J. Hewlett-Packard Laboratories, Palo Alto Girolami G. Hewlett-Packard Laboratories, Palo Alto Fini Paul T. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Ibbetson J.P. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Keller S. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara DenBaars Steven Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Speck J. S. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Mishra U. K. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e2 1092-5783 4:1<e2 1999 4 MIJ https://doi.org/10.1557/S1092578300000582 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000582 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Marchand H. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Zhang N. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Zhao L. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Golan Y. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Rosner S.J. Hewlett-Packard Laboratories, Palo Alto NATIONALLICENCE 700 1- Girolami G. Hewlett-Packard Laboratories, Palo Alto NATIONALLICENCE 700 1- Fini Paul T. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Ibbetson J.P. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Keller S. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- DenBaars Steven Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Speck J. S. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 700 1- Mishra U. K. Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e2 1092-5783 4:1<e2 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge