caa a22 4500 388114797 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000600 doi S1092578300000600 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000600 Novel approach to simulation of group-III nitrides growth by MOVPE [Elektronische Daten] Recent studies revealed specific features of chemical processes occurring on the surface of growing group-III nitrides - extremely low sticking probability of molecular nitrogen, low sticking coefficient and incomplete decomposition of ammonia frequently used as the nitrogen precursor. These features (kinetic by nature) result in the growth process going on under conditions remarkably deviated from the gas-solid heterogeneous equilibrium. In this paper we propose a novel approach to modeling of group-III nitride growth by MOVPE taking into account these features. In the model the sticking/evaporation coefficients of N2 and NH3 extracted from independent experiments are used allowing adequate description of the kinetic effects. The model is applied to analysis of growth of binary (GaN) and ternary (InGaN) compounds in a horizontal tube reactor. The growth rate and the solid phase composition are predicted theoretically and compared with available experimental data. The modeling results reveal lower ammonia decomposition ratio on the surface of the crystal as compared to thermodynamic expectations. The developed model can be used for optimization of growth process conditions. Copyright © 1999 Materials Research Society Keywords: MOVPE nationallicence GaN nationallicence InGaN nationallicence growth rate nationallicence indium incorporation nationallicence ammonia decomposition nationallicence Karpov S. Yu Soft-Impact Ltd (St.Petersburg, Russia) Prokofyev V. G. Soft-Impact Ltd (St.Petersburg, Russia) Yakovlev E. V. Soft-Impact Ltd (St.Petersburg, Russia) Talalaev R. A. Ioffe Physical-Technical Institute Makarov Yu. N. Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e4 1092-5783 4:1<e4 1999 4 MIJ https://doi.org/10.1557/S1092578300000600 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000600 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Karpov S. Yu Soft-Impact Ltd (St.Petersburg, Russia) NATIONALLICENCE 700 1- Prokofyev V. G. Soft-Impact Ltd (St.Petersburg, Russia) NATIONALLICENCE 700 1- Yakovlev E. V. Soft-Impact Ltd (St.Petersburg, Russia) NATIONALLICENCE 700 1- Talalaev R. A. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Makarov Yu. N. Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e4 1092-5783 4:1<e4 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge