caa a22 4500 388114827 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000697 doi S1092578300000697 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000697 New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type AIIIBV on sapphire substrates [Elektronische Daten] We propose the use of a buffer sublayer made of materials with crystal structure of cubic syngony to eliminate 30° in-plane rotation of (0001) heteroepitaxial wurtzite type AIIIBV nitride films with respect to the (0001) or (110) working surface of the sapphire substrate. In these cases, the lattice parameter mismatch between the sapphire substrate surface and the semiconductor film is much smaller, and the cleavage planes of the sapphire and the semiconductor films with wurtzite structure forming the active region of a heterolaser are parallel. It is shown experimentally that using, for instance, Nb on (0001) Al2O3 or NbN on (110) Al2O3, allows the elimination of the 30° in-plane rotation of the (0001)AlN film with respect to the (0001) or (110) working surface of the sapphire substrate. Copyright © 1999 Materials Research Society Keywords: thin films nationallicence AIIIBV nitrides nationallicence substrates nationallicence epitaxy nationallicence sapphire substrate nationallicence Kotelyanskii M.J. 312 Quaker Church Road, Apt. D4, Flanders, NJ, 07869 Kotelyanskii I.M. Institute of Radioengineering and Electronics Kravchenko V.B. Institute of Radioengineering and Electronics MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e13 1092-5783 4:1<e13 1999 4 MIJ https://doi.org/10.1557/S1092578300000697 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000697 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kotelyanskii M.J. 312 Quaker Church Road, Apt. D4, Flanders, NJ, 07869 NATIONALLICENCE 700 1- Kotelyanskii I.M. Institute of Radioengineering and Electronics NATIONALLICENCE 700 1- Kravchenko V.B. Institute of Radioengineering and Electronics NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e13 1092-5783 4:1<e13 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge