caa a22 4500 388114835 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S109257830000065X doi S109257830000065X pii (NATIONALLICENCE)cambridge-10.1557/S109257830000065X Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes [Elektronische Daten] A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region. Copyright © 1999 Materials Research Society Keywords: nitrides nationallicence UV detector nationallicence detector array nationallicence visible-blind nationallicence Brown J.D. Department of Physics, North Carolina State University Yu Zhonghai Department of Physics, North Carolina State University Matthews J. Department of Physics, North Carolina State University Harney S. Department of Physics, North Carolina State University Boney J. Department of Physics, North Carolina State University Schetzina J.F. Department of Physics, North Carolina State University Benson J.D. Night Vision Laboratory, Ft. Belvoir, VA Dang K.W. Night Vision Laboratory, Ft. Belvoir, VA Terrill C. Night Vision Laboratory, Ft. Belvoir, VA Nohava Thomas Night Vision Laboratory, Ft. Belvoir, VA Yang Wei Honeywell Technology Center Krishnankutty Subash Honeywell Technology Center MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e9 1092-5783 4:1<e9 1999 4 MIJ https://doi.org/10.1557/S109257830000065X text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S109257830000065X text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Brown J.D. Department of Physics, North Carolina State University NATIONALLICENCE 700 1- Yu Zhonghai Department of Physics, North Carolina State University NATIONALLICENCE 700 1- Matthews J. Department of Physics, North Carolina State University NATIONALLICENCE 700 1- Harney S. Department of Physics, North Carolina State University NATIONALLICENCE 700 1- Boney J. Department of Physics, North Carolina State University NATIONALLICENCE 700 1- Schetzina J.F. Department of Physics, North Carolina State University NATIONALLICENCE 700 1- Benson J.D. Night Vision Laboratory, Ft. Belvoir, VA NATIONALLICENCE 700 1- Dang K.W. Night Vision Laboratory, Ft. Belvoir, VA NATIONALLICENCE 700 1- Terrill C. Night Vision Laboratory, Ft. Belvoir, VA NATIONALLICENCE 700 1- Nohava Thomas Night Vision Laboratory, Ft. Belvoir, VA NATIONALLICENCE 700 1- Yang Wei Honeywell Technology Center NATIONALLICENCE 700 1- Krishnankutty Subash Honeywell Technology Center NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e9 1092-5783 4:1<e9 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge