caa a22 4500 388114843 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000570 doi S1092578300000570 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000570 Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System [Elektronische Daten] InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 × 800 μm2. The threshold current density was 20.3 kA cm−2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K. Copyright © 1999 Materials Research Society Keywords: nitrides nationallicence InGaN/GaN LD nationallicence MOCVD nationallicence Park Y. Samsung Advanced Institute of Technology Kim B.j. Samsung Advanced Institute of Technology Lee J. W. Samsung Advanced Institute of Technology Nam O. H. Samsung Advanced Institute of Technology Sone C. Samsung Advanced Institute of Technology Park H. Samsung Advanced Institute of Technology Eunsoon Oh Samsung Advanced Institute of Technology Shin H. Samsung Advanced Institute of Technology Chae S. 1Samsung Advanced Institute of Technology Cho J. Samsung Advanced Institute of Technology Kim Ig-Hyeon Samsung Advanced Institute of Technology Khim J.S. Samsung Advanced Institute of Technology Cho S. Samsung Advanced Institute of Technology Kim T.I. Samsung Advanced Institute of Technology MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e1 1092-5783 4:1<e1 1999 4 MIJ https://doi.org/10.1557/S1092578300000570 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000570 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Park Y. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Kim B.j. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Lee J. W. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Nam O. H. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Sone C. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Park H. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Eunsoon Oh Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Shin H. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Chae S. 1Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Cho J. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Kim Ig-Hyeon Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Khim J.S. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Cho S. Samsung Advanced Institute of Technology NATIONALLICENCE 700 1- Kim T.I. Samsung Advanced Institute of Technology NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e1 1092-5783 4:1<e1 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge