caa a22 4500 388114851 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000636 doi S1092578300000636 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000636 Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells [Elektronische Daten] Photoluminescence spectra were measured for 100 Å wurtzite GaN AlGaN modulation doped quantum wells. Three well-resolved peaks originate from the quantum well. The theoretically calculated confinement energies have been compared to the experimental energy positions and found to be in good agreement with the data, assuming that the piezoelectric field is largely screened by the electron gas. The highest energy transition may originate from the Fermi edge, consistent with the temperature dependence of the photoluminescence. Decay times for the different transitions indicate that the photoexcited holes are localized. Copyright © 1999 Materials Research Society Keywords: nitrides nationallicence quantum well nationallicence modulation doping nationallicence piezoelectric nationallicence field nationallicence PL nationallicence Dalfors J. Department of Physics and Measurement Technology, Linköping University Bergman J. P. Department of Physics and Measurement Technology, Linköping University Holtz P.O. Department of Physics and Measurement Technology, Linköping University Monemar B. Department of Physics and Measurement Technology, Linköping University Amano H. Department of Electrical and Electronic Engineering, Meijo University Akasaki I. Department of Electrical and Electronic Engineering, Meijo University MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e7 1092-5783 4:1<e7 1999 4 MIJ https://doi.org/10.1557/S1092578300000636 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000636 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dalfors J. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Bergman J. P. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Holtz P.O. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Monemar B. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Amano H. Department of Electrical and Electronic Engineering, Meijo University NATIONALLICENCE 700 1- Akasaki I. Department of Electrical and Electronic Engineering, Meijo University NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e7 1092-5783 4:1<e7 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge