caa a22 4500 38811486X CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000727 doi S1092578300000727 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000727 Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures [Elektronische Daten] We present a study of the radiative recombination in In0.15Ga0.85N/GaN multiple quantum well samples, where the conditions of growth of the InGaN quantum layers were varied in terms of growth temperature (< 800 °C) and donor doping. The photoluminescence peak position varies strongly (over a range as large as 0.3 eV) with delay time after pulsed excitation, but also with donor doping and with excitation intensity. The peak position is mainly determined by the Stark effect induced by the piezoelectric field. In addition potential fluctuations, originating from segregation effects in the InGaN material, from interface roughness, and the strain fluctuations related to these phenomena, play an important role, and largely determine the width of the emission. These potential fluctuations may be as large as 0.2 eV in the present samples, and appear to be important for all studied growth temperatures for the InGaN layers. Screening effects from donor electrons and excited electron-hole pairs are important, and account for a large part of the spectral shift with donor doping (an upward shift of the photoluminescence peak up to 0.2 eV is observed for a Si donor density of 2 × 1018 cm−3 in the well), with excitation intensity and with delay time after pulsed excitation (also shifts up to 0.2 eV). We suggest a two-dimensional model for electron- and donor screening in this case, which is in reasonable agreement with the observed data, if rather strong localization potentials of short range (of the order 100 Å) are present. The possibility that excitons as well as shallow donors are impact ionized by electrons in the rather strong lateral potential fluctuations present at this In composition is discussed Copyright © 1999 Materials Research Society Keywords: nitrides nationallicence InGaN nationallicence multiple quantum well nationallicence screening nationallicence effect nationallicence Monemar B. Department of Physics and Measurement Technology, Linköping University Bergman J. P. Department of Physics and Measurement Technology, Linköping University Dalfors J. Department of Physics and Measurement Technology, Linköping University Pozina G. Department of Physics and Measurement Technology, Linköping University Sernelius B.E. Department of Physics and Measurement Technology, Linköping University Holtz P.O. Department of Physics and Measurement Technology, Linköping University Amano H. Department of Electrical and Electronic Engineering, Meijo University Akasaki I. Department of Electrical and Electronic Engineering, Meijo University MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e16 1092-5783 4:1<e16 1999 4 MIJ https://doi.org/10.1557/S1092578300000727 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000727 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Monemar B. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Bergman J. P. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Dalfors J. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Pozina G. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Sernelius B.E. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Holtz P.O. Department of Physics and Measurement Technology, Linköping University NATIONALLICENCE 700 1- Amano H. Department of Electrical and Electronic Engineering, Meijo University NATIONALLICENCE 700 1- Akasaki I. Department of Electrical and Electronic Engineering, Meijo University NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e16 1092-5783 4:1<e16 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge