caa a22 4500 388114878 CHVBK 20180307125403.0 cr unu---uuuuu 161130s1999 xx s 000 0 eng 10.1557/S1092578300000703 doi S1092578300000703 pii (NATIONALLICENCE)cambridge-10.1557/S1092578300000703 Strain relaxation in GaN layers grown on porous GaN sublayers [Elektronische Daten] We have studied epitaxial GaN layers grown by hydride vapour phase epitaxy (HVPE) on porous GaN sublayers formed on SiC substrates. It was shown that these layers can be grown with good surface morphology and high crystalline quality. X-ray, Raman and photoluminescent (PL) measurements showed that the stress in the layers grown on porous GaN was reduced to 0.1-0.2 GPa, while the stress in the layers grown directly on 6H-SiC substrates remains at its usual level of about 1 GPa. Thus, we have shown that growth on porous GaN sublayer is a promising method for fabrication of high quality epitaxial layers of GaN with low strain values. Copyright © 1999 Materials Research Society Keywords: GaN nationallicence porous nationallicence HVPE nationallicence strain nationallicence Mynbaeva M. Ioffe Physical-Technical Institute Titkov A. Ioffe Physical-Technical Institute Kryzhanovski A. Ioffe Physical-Technical Institute Kotousova I. Ioffe Physical-Technical Institute Zubrilov A.S. Ioffe Physical-Technical Institute Ratnikov V.V. Ioffe Physical-Technical Institute Davydov V. Yu Ioffe Physical-Technical Institute Kuznetsov N.I. Ioffe Physical-Technical Institute Mynbaev K. Ioffe Physical-Technical Institute Tsvetkov D.V. Crystal Growth Research Center Stepanov S. Crystal Growth Research Center Cherenkov A. Crystal Growth Research Center Dmitriev V.A. Technologies and Devices International, Inc. MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e14 1092-5783 4:1<e14 1999 4 MIJ https://doi.org/10.1557/S1092578300000703 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/S1092578300000703 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mynbaeva M. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Titkov A. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Kryzhanovski A. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Kotousova I. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Zubrilov A.S. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Ratnikov V.V. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Davydov V. Yu Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Kuznetsov N.I. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Mynbaev K. Ioffe Physical-Technical Institute NATIONALLICENCE 700 1- Tsvetkov D.V. Crystal Growth Research Center NATIONALLICENCE 700 1- Stepanov S. Crystal Growth Research Center NATIONALLICENCE 700 1- Cherenkov A. Crystal Growth Research Center NATIONALLICENCE 700 1- Dmitriev V.A. Technologies and Devices International, Inc NATIONALLICENCE 773 0- MRS Internet Journal of Nitride Semiconductor Research Cambridge University Press 4/1(1999), e14 1092-5783 4:1<e14 1999 4 MIJ CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge