caa a22 4500 397502486 CHVBK 20180308164536.0 cr unu---uuuuu 161202e19950801xx s 000 0 eng 10.1093/oxfordjournals.rpd.a082748 doi 0144-8420 pii (NATIONALLICENCE)oxford-10.1093/oxfordjournals.rpd.a082748 Unbiased Metal Oxide Semiconductor Ionising Radiation Dosemeter [Elektronische Daten] [N. Kumurdjian, G.J. Sarrabayrouse] The potential of metal oxide semiconductor transistors acting as ionising radiation dosemeters when working without any applied bias during irradiation has been evaluated. Sensitivity to doses during photon irradiation and stability with temperature and time have been measured. It is concluded that such dosemeters can be used advantageously to measure doses ranging down to 10-2Gy. Radiation Protection Dosimetry Kumurdjian N. aut Sarrabayrouse G.J. aut Radiation Protection Dosimetry Oxford University Press 61/1-3(1995-08-01), 19-24 0144-8420 61:1-3<19 1995 61 rpd https://doi.org/10.1093/oxfordjournals.rpd.a082748 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1093/oxfordjournals.rpd.a082748 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kumurdjian N. aut NATIONALLICENCE 700 1- Sarrabayrouse G.J. aut NATIONALLICENCE 773 0- Radiation Protection Dosimetry Oxford University Press 61/1-3(1995-08-01), 19-24 0144-8420 61:1-3<19 1995 61 rpd Metadata rights reserved CC BY-NC-4.0 http://creativecommons.org/licenses/by-nc/4.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-oxford