caa a22 4500 397569831 CHVBK 20180308164838.0 cr unu---uuuuu 161202e199608 xx s 000 0 eng 10.1093/oxfordjournals.jmicro.a023445 doi (NATIONALLICENCE)oxford-10.1093/oxfordjournals.jmicro.a023445 In Situ Microlithography of Si and GaAs by a Focused Ion Beam in a 200 keV TEM [Elektronische Daten] [Kazuo Furuya, Tetsuya Saito, Isamu Yamada, Takao Hata] In situ microfabrication by a focused ion beam (FIB) during observation in a transmission electron microscope (TEM) was successfully carried out on the specimens of n-type Si(100) and GaAs(100). An FIB system attached to the TEM was developed by modifying a specimen chamber of a 200 keV TEM to be compatible with the injection of Ion beams. The minimum ion beam diameter of about 200 nm and the Ion current of 80 pA were obtained at the specimen position with the working distance of about 100mm for 25 keV Ga ions. The difference in the microstructure after the FIB microlithography was found between Si and GaAs. Ga ions sputtered out Si atoms uniformly, but were partially Implanted at the shallow portion beneath the surface, while the selective etching of As and the implantation of Ga resulted in the formation of amorphous and/or liquid precipitates of Ga on the surface of GaAs. It should be noted that the structural and compositional changes will be the key factors to control the heterogeneous structure of semiconductors by ion beam lithography. © 1996 Oxford University Press Full-length Papers nationallicence focused ion beam (FIB) nationallicence transmission electron microscope (TEM) nationallicence microlithography nationallicence in situ observation nationallicence Ga precipitates nationallicence Furuya Kazuo JEOL Datum Ltd., 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 1-2-1 Sengen, Tsukuba, Ibaraki, 305 Japan aut Saito Tetsuya JEOL Datum Ltd., 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 1-2-1 Sengen, Tsukuba, Ibaraki, 305 Japan aut Yamada Isamu JEOL Datum Ltd. 3-1-2 Musashino, Akishima, Tokyo, 196 Japan aut Hata Takao JEOL Ltd 3-1-2 Musashino, Akishima, Tokyo, 196 Japan aut Microscopy Oxford University Press 45/4(1996-08), 291-297 0022-0744 45:4<291 1996 45 jmicro https://doi.org/10.1093/oxfordjournals.jmicro.a023445 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1093/oxfordjournals.jmicro.a023445 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Furuya Kazuo JEOL Datum Ltd., 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 1-2-1 Sengen, Tsukuba, Ibaraki, 305 Japan aut NATIONALLICENCE 700 1- Saito Tetsuya JEOL Datum Ltd., 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 3-1-2 Musashino, Akishima, Tokyo, 196 Japan, 1-2-1 Sengen, Tsukuba, Ibaraki, 305 Japan aut NATIONALLICENCE 700 1- Yamada Isamu JEOL Datum Ltd. 3-1-2 Musashino, Akishima, Tokyo, 196 Japan aut NATIONALLICENCE 700 1- Hata Takao JEOL Ltd 3-1-2 Musashino, Akishima, Tokyo, 196 Japan aut NATIONALLICENCE 773 0- Microscopy Oxford University Press 45/4(1996-08), 291-297 0022-0744 45:4<291 1996 45 jmicro Metadata rights reserved CC BY-NC-4.0 http://creativecommons.org/licenses/by-nc/4.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-oxford