Heteroepitaxy of Ge x Si1 − x ( x ∼ 0.4-0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction

Verfasser / Beitragende:
[Yu. Bolkhovityanov, A. Deryabin, A. Gutakovskii, L. Sokolov]
Ort, Verlag, Jahr:
2010
Enthalten in:
Physics of the Solid State, 52/1(2010-01-01), 32-36
Format:
Artikel (online)
ID: 445109246