Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals

Verfasser / Beitragende:
[V. Talanin, I. Talanin]
Ort, Verlag, Jahr:
2010
Enthalten in:
Physics of the Solid State, 52/9(2010-09-01), 1880-1886
Format:
Artikel (online)
ID: 445109939