Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films

Verfasser / Beitragende:
[V. Andreev, V. Klimov]
Ort, Verlag, Jahr:
2010
Enthalten in:
Physics of the Solid State, 52/3(2010-03-01), 605-611
Format:
Artikel (online)
ID: 445111054