Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

Verfasser / Beitragende:
[V. Bessolov, Yu. Zhilyaev, E. Konenkova, L. Sorokin, N. Feoktistov, Sh. Sharofidinov, M. Shcheglov, S. Kukushkin, L. Mets, A. Osipov]
Ort, Verlag, Jahr:
2010
Enthalten in:
Technical Physics Letters, 36/6(2010-06-01), 496-499
Format:
Artikel (online)
ID: 445128208