Chemical effect of inert argon beam on nitride nanolayer formed by ion implantation into GaAs surface

Verfasser / Beitragende:
[V. Mikoushkin]
Ort, Verlag, Jahr:
2010
Enthalten in:
Technical Physics Letters, 36/12(2010-12-01), 1136-1139
Format:
Artikel (online)
ID: 445128879