Method for evaluating the parameters of radiation defects and predicting the radiation resistance of MOS transistors

Verfasser / Beitragende:
[M. Levin, E. Bondarenko, A. Bormontov, A. Tatarintsev, V. Gitlin]
Ort, Verlag, Jahr:
2010
Enthalten in:
Technical Physics Letters, 36/8(2010-08-01), 703-705
Format:
Artikel (online)
ID: 445130105