Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

Verfasser / Beitragende:
[M. Bakhadyrkhanov, K. Ayupov, Kh. Iliev, G. Mavlonov, O. Sattorov]
Ort, Verlag, Jahr:
2010
Enthalten in:
Technical Physics Letters, 36/8(2010-08-01), 741-744
Format:
Artikel (online)
ID: 445130199