Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

Verfasser / Beitragende:
[I. Atabaev, N. Matchanov, M. Khazhiev, Sh. Yusupova]
Ort, Verlag, Jahr:
2010
Enthalten in:
Technical Physics Letters, 36/2(2010-02-01), 115-118
Format:
Artikel (online)
ID: 445130695