Specific features of relief formation on silicon etched by a focused ion beam

Verfasser / Beitragende:
[N. Gerasimenko, A. Chamov, N. Medetov, V. Khanin]
Ort, Verlag, Jahr:
2010
Enthalten in:
Technical Physics Letters, 36/11(2010-11-01), 991-993
Format:
Artikel (online)
ID: 445130806