caa a22 4500 445303077 CHVBK 20180317142604.0 cr unu---uuuuu 170323e20100101xx s 000 0 eng 10.1007/s12274-010-1002-8 doi (NATIONALLICENCE)springer-10.1007/s12274-010-1002-8 Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material [Elektronische Daten] [Yijian Ouyang, Hongjie Dai, Jing Guo] The performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-κ) gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs. Tsinghua University Press and Springer Berlin Heidelberg, 2010 graphene nanoribbon (GNR) nationallicence multilayer graphene nationallicence new channel material nationallicence field-effect transistor nationallicence carbon nanotube (CNT) nationallicence Ouyang Yijian Department of Electrical and Computer Engineering, University of Florida, 32611, Gainesville, FL, USA aut Dai Hongjie Department of Chemistry, Stanford University, 94305, Stanford, CA, USA aut Guo Jing Department of Electrical and Computer Engineering, University of Florida, 32611, Gainesville, FL, USA aut Nano Research Tsinghua Press 3/1(2010-01-01), 8-15 1998-0124 3:1<8 2010 3 12274 https://doi.org/10.1007/s12274-010-1002-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12274-010-1002-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ouyang Yijian Department of Electrical and Computer Engineering, University of Florida, 32611, Gainesville, FL, USA aut NATIONALLICENCE 700 1- Dai Hongjie Department of Chemistry, Stanford University, 94305, Stanford, CA, USA aut NATIONALLICENCE 700 1- Guo Jing Department of Electrical and Computer Engineering, University of Florida, 32611, Gainesville, FL, USA aut NATIONALLICENCE 773 0- Nano Research Tsinghua Press 3/1(2010-01-01), 8-15 1998-0124 3:1<8 2010 3 12274 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer