caa a22 4500 445303395 CHVBK 20180317142605.0 cr unu---uuuuu 170323e20101201xx s 000 0 eng 10.1007/s12274-010-0054-0 doi (NATIONALLICENCE)springer-10.1007/s12274-010-0054-0 Synthesis and device applications of high-density aligned carbon nanotubes using low-pressure chemical vapor deposition and stacked multiple transfer [Elektronische Daten] [Chuan Wang, Koungmin Ryu, Lewis De Arco, Alexander Badmaev, Jialu Zhang, Xue Lin, Yuchi Che, Chongwu Zhou] For nanotube-based electronics to become a viable alternative to silicon technology, high-density aligned carbon nanotubes are essential. In this paper, we report the combined use of low-pressure chemical vapor deposition and stacked multiple transfer to achieve high-density aligned nanotubes. By using an optimized nanotube synthesis recipe, we have achieved high-density aligned carbon nanotubes with density as high as 30 tubes/μm. In addition, a facile stacked multiple transfer technique has been developed to further increase the nanotube density to 55 tubes/μm. Furthermore, high-performance submicron carbon nanotube field-effect transistors have been fabricated on the high-density aligned nanotubes. Before removing the metallic nanotubes by electrical breakdown, the devices exhibit on-current density of 92.4 μA/μm and normalized transconductance of 13.3 μS/μm. Moreover, benchmarking with the aligned carbon nanotube transistors in the literature indicates that our devices exhibit the best performance so far, which is attributed to both the increased nanotube density and scaling down of channel length. This study shows the great potential of using such high-density aligned nanotubes for high performance nanoelectronics and analog/RF applications. Tsinghua University Press and Springer-Verlag Berlin Heidelberg, 2010 Aligned carbon nanotubes nationallicence chemical vapor deposition nationallicence high-density nationallicence high performance transistors nationallicence Wang Chuan Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut Ryu Koungmin Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut De Arco Lewis Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut Badmaev Alexander Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut Zhang Jialu Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut Lin Xue Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut Che Yuchi Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut Zhou Chongwu Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut Nano Research Tsinghua Press 3/12(2010-12-01), 831-842 1998-0124 3:12<831 2010 3 12274 https://doi.org/10.1007/s12274-010-0054-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s12274-010-0054-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Chuan Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 700 1- Ryu Koungmin Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 700 1- De Arco Lewis Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 700 1- Badmaev Alexander Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 700 1- Zhang Jialu Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 700 1- Lin Xue Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 700 1- Che Yuchi Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 700 1- Zhou Chongwu Ming Hsieh Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, California, USA aut NATIONALLICENCE 773 0- Nano Research Tsinghua Press 3/12(2010-12-01), 831-842 1998-0124 3:12<831 2010 3 12274 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer