caa a22 4500 445305851 CHVBK 20180317142612.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10762-011-9765-x doi (NATIONALLICENCE)springer-10.1007/s10762-011-9765-x Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy [Elektronische Daten] [Takashi Yoshioka, Satoru Takatori, Pham Minh, Marilou Cadatal-Raduban, Tomoharu Nakazato, Toshihiko Shimizu, Nobuhiko Sarukura, Elmer Estacio, John Misa, Rafael Jaculbia, Michael Defensor, Armando Somintac, Arnel Salvador] We report on the terahertz emission from femtosecond-laser-irradiated GaAs layers grown on Si(100) and Si(111) substrates. The results show that the terahertz emission from GaAs on Si is stronger than that of a semi-insulating bulk GaAs crystal. This increase is attributed to the strain field at the GaAs/Si interface. In the GaAs of the Si(100) sample, the stronger terahertz emission is observed compared with GaAs on Si(111). Moreover, the effect of changing the doping type of the Si substrate from n-type to semi-insulating was also studied and it was found that the terahertz emission intensity of GaAs on semi-insulating Si(100) is stronger than that of GaAs on n-type Si(100). Finally, strong terahertz emission from GaAs on semi-insulating Si(100) was observed not only in the reflection geometry but also in the transmission geometry. These results hold promise for new applications of terahertz optoelectronics. Springer Science+Business Media, LLC, 2011 Terahertz radiation nationallicence Molecular beam epitaxy nationallicence Gallium compounds nationallicence Semiconducting materials nationallicence Yoshioka Takashi Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut Takatori Satoru Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut Minh Pham Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut Cadatal-Raduban Marilou Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut Nakazato Tomoharu Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut Shimizu Toshihiko Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut Sarukura Nobuhiko Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut Estacio Elmer Research Center for Development of Far-Infrared Region, University of Fukui, 3-9-1 Bunkyo, 910-8507, Fukui, Japan aut Misa John National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Jaculbia Rafael National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Defensor Michael National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Somintac Armando National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Salvador Arnel National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Journal of Infrared, Millimeter, and Terahertz Waves Springer US; http://www.springer-ny.com 32/4(2011-04-01), 418-425 1866-6892 32:4<418 2011 32 10762 https://doi.org/10.1007/s10762-011-9765-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10762-011-9765-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yoshioka Takashi Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut NATIONALLICENCE 700 1- Takatori Satoru Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut NATIONALLICENCE 700 1- Minh Pham Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut NATIONALLICENCE 700 1- Cadatal-Raduban Marilou Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut NATIONALLICENCE 700 1- Nakazato Tomoharu Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut NATIONALLICENCE 700 1- Shimizu Toshihiko Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut NATIONALLICENCE 700 1- Sarukura Nobuhiko Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, 565-0871, Osaka, Japan aut NATIONALLICENCE 700 1- Estacio Elmer Research Center for Development of Far-Infrared Region, University of Fukui, 3-9-1 Bunkyo, 910-8507, Fukui, Japan aut NATIONALLICENCE 700 1- Misa John National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 700 1- Jaculbia Rafael National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 700 1- Defensor Michael National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 700 1- Somintac Armando National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 700 1- Salvador Arnel National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 773 0- Journal of Infrared, Millimeter, and Terahertz Waves Springer US; http://www.springer-ny.com 32/4(2011-04-01), 418-425 1866-6892 32:4<418 2011 32 10762 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer