caa a22 4500 445305959 CHVBK 20180317142613.0 cr unu---uuuuu 170323e20110501xx s 000 0 eng 10.1007/s10762-010-9694-0 doi (NATIONALLICENCE)springer-10.1007/s10762-010-9694-0 Intense Terahertz Radiation from InAs Thin Films [Elektronische Daten] [Shigehiko Sasa, Shinya Umino, Yutaro Ishibashi, Toshihiko Maemoto, Masataka Inoue, Kei Takeya, Masayoshi Tonouchi] Terahertz (THz) radiation from InAs thin films grown by molecular-beam epitaxy on closely lattice-matched p-type GaSb (100) substrates and lattice-mismatched semi-insulating GaAs (100) substrates was investigated. The THz radiation intensity was measured from InAs films with thicknesses between 100nm and 1.5μm excited by a femtosecond laser pulse with a wavelength of approximately 780nm. The radiation intensity increased as the InAs film thickness increased and it exceeded that from a bulk n-type InAs substrate with an electron concentration of 2.3 × 1016cm−3 when the InAs film thickness was greater than about 500nm. In addition, the THz intensity from a 1-μm-thick InAs film was greater than that from a bulk p-type InAs substrate. We ascribe this enhanced THz intensity to the wave reflected from the lower interface between the InAs film and the layer grown beneath it. We confirmed this by observing an increased pulse width due to constructive overlap of the reflected wave. The results demonstrate that InAs thin films are promising materials for THz emitting devices. Springer Science+Business Media, LLC, 2010 THz radiation nationallicence InAs nationallicence Thin films nationallicence MBE nationallicence Sasa Shigehiko Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut Umino Shinya Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut Ishibashi Yutaro Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut Maemoto Toshihiko Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut Inoue Masataka Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut Takeya Kei Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, 565-0871, Suita, Japan aut Tonouchi Masayoshi Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, 565-0871, Suita, Japan aut Journal of Infrared, Millimeter, and Terahertz Waves Springer US; http://www.springer-ny.com 32/5(2011-05-01), 646-654 1866-6892 32:5<646 2011 32 10762 https://doi.org/10.1007/s10762-010-9694-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10762-010-9694-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sasa Shigehiko Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut NATIONALLICENCE 700 1- Umino Shinya Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut NATIONALLICENCE 700 1- Ishibashi Yutaro Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut NATIONALLICENCE 700 1- Maemoto Toshihiko Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut NATIONALLICENCE 700 1- Inoue Masataka Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, 535-8585, Osaka, Japan aut NATIONALLICENCE 700 1- Takeya Kei Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, 565-0871, Suita, Japan aut NATIONALLICENCE 700 1- Tonouchi Masayoshi Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, 565-0871, Suita, Japan aut NATIONALLICENCE 773 0- Journal of Infrared, Millimeter, and Terahertz Waves Springer US; http://www.springer-ny.com 32/5(2011-05-01), 646-654 1866-6892 32:5<646 2011 32 10762 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer