caa a22 4500 445362561 CHVBK 20180317142919.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10832-011-9661-8 doi (NATIONALLICENCE)springer-10.1007/s10832-011-9661-8 Photoluminescence and Raman spectroscopy characterization of highly c-axis oriented MgxZn1−xO thin films on Pt-coated silicon substrates [Elektronische Daten] [Xinman Chen, Hong Zhou, Guangheng Wu, Dinghua Bao] Highly c-axis oriented $$ {\text{M}}{{\text{g}}_{\text{x}}}{\text{Z}}{{\text{n}}_{{1 - {\text{x}}}}}{\text{O}}\left( {x = 0 \sim 0.2} \right) $$ thin films with pure hexagonal phase were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition method, and their structure, photoluminescence, and lattice vibrational properties were studied. For the thin films with Mg contents ranging 0 ≤ x ≤ 0.20, the room-temperature near-band-edge emission exhibited blueshift up to about 0.35eV, indicating that the band-gaps of thin films could be tailored by Mg incorporation, meanwhile, the green emission of the thin films enhanced with increasing Mg content. Raman spectra analysis indicated that the decreasing high frequency E2 Raman modes showed composition-dependent asymmetrically broadening. The difference of electronegativity between Mg2+ for Zn2+ as well as the potential fluctuation were discussed. Furthermore, longtitudial optical modes exhibited one-mode behavior with observed ~25.8cm−1 blueshift. X-ray photoelectron spectroscopy measurements clearly confirmed the Mg incorporation. Springer Science+Business Media, LLC, 2011 MgZnO nationallicence Sol-gel nationallicence Raman spectroscopy nationallicence C-axis orientation nationallicence Chen Xinman Institute of Opto-electronic Materials and Technology, South China Normal University, 510631, Guangzhou, People's Republic of China aut Zhou Hong State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut Wu Guangheng State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut Bao Dinghua State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut Journal of Electroceramics Springer US; http://www.springer-ny.com 27/3-4(2011-12-01), 162-168 1385-3449 27:3-4<162 2011 27 10832 https://doi.org/10.1007/s10832-011-9661-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10832-011-9661-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen Xinman Institute of Opto-electronic Materials and Technology, South China Normal University, 510631, Guangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Zhou Hong State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Wu Guangheng State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Bao Dinghua State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electroceramics Springer US; http://www.springer-ny.com 27/3-4(2011-12-01), 162-168 1385-3449 27:3-4<162 2011 27 10832 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer