caa a22 4500 445362596 CHVBK 20180317142919.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10832-011-9662-7 doi (NATIONALLICENCE)springer-10.1007/s10832-011-9662-7 Leakage current analysis of hydrothermal BaTiO3 thin films [Elektronische Daten] [P. Raj, Baik-Woo Lee, Devarajan Balaraman, Rao Tummala] Hydrothermal processing can deposit crystalline ferroelectric films at low temperatures of less than 150°C to achieve permittivities above 100. Such a process, hence, can be attractive in integrating thin film capacitors in organic, silicon or flex substrates. However, their poor insulation strength leading to high leakage current can prevent their wide acceptance. Lattice defects such as hydroxyl groups are attributed to their high leakage currents and lower Breakdown Voltages (BDVs). With appropriate thermal treatments, majority of the OH groups can be removed, leading to improved insulation characteristics. The leakage current behavior of as-synthesized and post-baked hydrothermal thin films are analyzed with various conduction models. The room temperature I-V characteristics are attributed to a combination of ionic and Space-Charge-Limited (SCLC) conduction models for films baked at 160°C while higher baking temperatures of 350°C agree well with Poole-Frenkel type conduction, with an activation energy of 0.57 eV for the defects. The defects, which are presumably OH groups or oxygen vacancies embedded in the barium titanate lattice, act as shallow traps and the trapping and detrapping results in easier conduction. A brief perspective is provided on the suitability of such a hydrothermal thin film capacitor approach for power supply applications. Springer Science+Business Media, LLC, 2011 Barium titanate nationallicence Hydrothermal films nationallicence Leakage currents nationallicence Decoupling capacitors nationallicence Embedded passives nationallicence Poole-Frenkel conduction nationallicence Ionic conduction nationallicence Raj P. 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut Lee Baik-Woo 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut Balaraman Devarajan 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut Tummala Rao 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut Journal of Electroceramics Springer US; http://www.springer-ny.com 27/3-4(2011-12-01), 169-175 1385-3449 27:3-4<169 2011 27 10832 https://doi.org/10.1007/s10832-011-9662-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10832-011-9662-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Raj P. 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut NATIONALLICENCE 700 1- Lee Baik-Woo 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut NATIONALLICENCE 700 1- Balaraman Devarajan 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut NATIONALLICENCE 700 1- Tummala Rao 3D Systems Packaging Research Center, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut NATIONALLICENCE 773 0- Journal of Electroceramics Springer US; http://www.springer-ny.com 27/3-4(2011-12-01), 169-175 1385-3449 27:3-4<169 2011 27 10832 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer