caa a22 4500 44536260X CHVBK 20180317142919.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10832-011-9653-8 doi (NATIONALLICENCE)springer-10.1007/s10832-011-9653-8 Electrical characteristics of Cu-doped In2O3/Sb-doped SnO2 ohmic contacts for high-performance GaN-based light-emitting diodes [Elektronische Daten] [Joon-Ho Oh, Tae-Yeon Seong, H.-G. Hong, Kyoung-Kook Kim, S.-W. Yoon, J.-P. Ahn] We characterized the electrical and chemical properties of Cu-doped In2O3(CIO) (2.5nm thick)/Sb-doped SnO2(ATO) (250nm thick) contacts to p-type GaN by means of current-voltage measurement, scanning transmission electron microscope (STEM) and x-ray photoemission spectroscopy (XPS). The CIO/ATO contacts show ohmic behaviors, when annealed at 530 and 630°C. The effective Schottky barrier heights on diodes made with Ni (5nm)/Au (5nm) contacts decrease with increasing annealing temperature. STEM/energy dispersive x-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-Cu-oxide. XPS results show a shift of the surface Fermi level toward the lower binding energy side upon annealing. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. Springer Science+Business Media, LLC, 2011 Light emitting diode nationallicence Transparent electrode nationallicence SnO2 nationallicence Ohmic contact nationallicence Oh Joon-Ho Department of Materials Science and Engineering, Korea University, 136-713, Seoul, South Korea aut Seong Tae-Yeon Department of Materials Science and Engineering, Korea University, 136-713, Seoul, South Korea aut Hong H.-G Material & Device Center, Samsung Advanced Institute of Technology, 440-600, Suwon, South Korea aut Kim Kyoung-Kook Department of Nano-Optical Engineering, Korea Polytechnic University, 429-793, Gyeonggi, South Korea aut Yoon S.-W Advanced Analysis Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut Ahn J.-P Advanced Analysis Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut Journal of Electroceramics Springer US; http://www.springer-ny.com 27/3-4(2011-12-01), 109-113 1385-3449 27:3-4<109 2011 27 10832 https://doi.org/10.1007/s10832-011-9653-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10832-011-9653-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Oh Joon-Ho Department of Materials Science and Engineering, Korea University, 136-713, Seoul, South Korea aut NATIONALLICENCE 700 1- Seong Tae-Yeon Department of Materials Science and Engineering, Korea University, 136-713, Seoul, South Korea aut NATIONALLICENCE 700 1- Hong H.-G Material & Device Center, Samsung Advanced Institute of Technology, 440-600, Suwon, South Korea aut NATIONALLICENCE 700 1- Kim Kyoung-Kook Department of Nano-Optical Engineering, Korea Polytechnic University, 429-793, Gyeonggi, South Korea aut NATIONALLICENCE 700 1- Yoon S.-W Advanced Analysis Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut NATIONALLICENCE 700 1- Ahn J.-P Advanced Analysis Center, Korea Institute of Science and Technology, 136-791, Seoul, South Korea aut NATIONALLICENCE 773 0- Journal of Electroceramics Springer US; http://www.springer-ny.com 27/3-4(2011-12-01), 109-113 1385-3449 27:3-4<109 2011 27 10832 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer