caa a22 4500 445362944 CHVBK 20180317142920.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10832-011-9634-y doi (NATIONALLICENCE)springer-10.1007/s10832-011-9634-y Enhanced dielectric properties of low-temperature-sintered Ba0.6Sr0.4TiO3 thick films [Elektronische Daten] [Minghui Zhang, Hong Wang, Haibo Yang, Weihong Liu, Huanfu Zhou, Xi Yao] Ba0.6Sr0.4TiO3 thick films were fabricated at a lower temperature of 880°C by adding Li2O as sintering aid. A novel pretreatment of cold isostatic pressing was introduced to enhance the quality of films. After cold isostatic pressing prior to annealing, the thick film had a more compact morphology and better dielectric properties. The permittivity and tunability were increased to 1,318 and 19.04% from 925 and 14.81% while the dielectric loss was still kept low (1MHz, 16kV/cm). The enhanced properties and low-temperature sintering made BST thick films a potential candidate for Low Temperature Co-fired Ceramic (LTCC) and microwave tunable devices. Springer Science+Business Media, LLC, 2011 BST nationallicence Low-temperature sintering nationallicence Thick films nationallicence Tunability nationallicence Zhang Minghui Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Wang Hong Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Yang Haibo Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Liu Weihong Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Zhou Huanfu Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Yao Xi Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut Journal of Electroceramics Springer US; http://www.springer-ny.com 26/1-4(2011-06-01), 99-104 1385-3449 26:1-4<99 2011 26 10832 https://doi.org/10.1007/s10832-011-9634-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10832-011-9634-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang Minghui Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Wang Hong Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Yang Haibo Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Liu Weihong Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Zhou Huanfu Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Yao Xi Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 773 0- Journal of Electroceramics Springer US; http://www.springer-ny.com 26/1-4(2011-06-01), 99-104 1385-3449 26:1-4<99 2011 26 10832 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer