caa a22 4500 44536307X CHVBK 20180317142921.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10832-010-9628-1 doi (NATIONALLICENCE)springer-10.1007/s10832-010-9628-1 Depth-resolved correlation between physical and electrical properties of stressed SiNx gate insulator films [Elektronische Daten] [Jin-Seong Park, Chang Lee, Jae Yoon, Kwun-Bum Chung] The physical and electrical properties of SiNx gate insulator films with compressive and tensile internal stress have been investigated using various characterization techniques. The mechanical hardness measured by nano-indenter system showed the different distribution in the film depth direction according to the type of film stress. The uniformity of optical property inside films had a correspondence to the mechanical properties of stressed SiNx films, as well. The contents and bonding states of hydrogen influenced the mechanical and optical properties of stressed SiNx films. The leakage characteristics of tensile SiNx films with uniform physical properties exhibited the lower current density than the compressive films with ~10−7 A/cm2 until 8 MV/cm. The correlation between physical and electrical properties depending on the internal stress will suggest the appropriate optimization of SiNx gate insulator films to enhance the device performance and reliability. Springer Science+Business Media, LLC, 2011 SiN films nationallicence Gate insulator nationallicence Nano indentor nationallicence Mechanical hardness nationallicence Refractive index nationallicence Depth profile nationallicence Park Jin-Seong Department of Materials Science and Engineering, Dankook University, Dongnamgu Anseodong 29, 330-714, Cheonan, South Korea aut Lee Chang Department of Nano & Electronic Physics, Kookmin University, 136-702, Seoul, South Korea aut Yoon Jae Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, 130-701, Seoul, South Korea aut Chung Kwun-Bum Department of Physics, Dankook University, Dongnamgu Anseodong 29, 330-714, Cheonan, South Korea aut Journal of Electroceramics Springer US; http://www.springer-ny.com 26/1-4(2011-06-01), 63-67 1385-3449 26:1-4<63 2011 26 10832 https://doi.org/10.1007/s10832-010-9628-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10832-010-9628-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Park Jin-Seong Department of Materials Science and Engineering, Dankook University, Dongnamgu Anseodong 29, 330-714, Cheonan, South Korea aut NATIONALLICENCE 700 1- Lee Chang Department of Nano & Electronic Physics, Kookmin University, 136-702, Seoul, South Korea aut NATIONALLICENCE 700 1- Yoon Jae Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, 130-701, Seoul, South Korea aut NATIONALLICENCE 700 1- Chung Kwun-Bum Department of Physics, Dankook University, Dongnamgu Anseodong 29, 330-714, Cheonan, South Korea aut NATIONALLICENCE 773 0- Journal of Electroceramics Springer US; http://www.springer-ny.com 26/1-4(2011-06-01), 63-67 1385-3449 26:1-4<63 2011 26 10832 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer