caa a22 4500 445368322 CHVBK 20180317142938.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s00340-010-4298-x doi (NATIONALLICENCE)springer-10.1007/s00340-010-4298-x Fast simultaneous measurement of multi-gases using quantum cascade laser photoacoustic spectroscopy [Elektronische Daten] [W. Liu, L. Wang, L. Li, J. Liu, F.-Q. Liu, Z. Wang] The authors developed a fast simultaneous method in detecting multi-gases using quantum cascade laser (QCL) based photoacoustic (PA) spectroscopy. We demonstrated the simultaneous measurement of CO and SO2 concentrations using two QCLs working at 4.56 and 7.38μm, corresponding to the absorption bands of CO and SO2, respectively. The modulation frequencies of the two QCLs were 234 and 244Hz. The response time was 0.6seconds. Acomputer sound card was used to process the PA signals. Fast Fourier transform was an essential step to get the amplitudes of the PA signals at different frequencies. The concentration of each gas can be obtained from the PA signal amplitude at the corresponding modulation frequency. Springer-Verlag, 2010 Liu W. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Wang L. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Li L. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Liu J. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Liu F.-Q Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Wang Z. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Applied Physics B Springer-Verlag 103/3(2011-06-01), 743-747 0946-2171 103:3<743 2011 103 340 https://doi.org/10.1007/s00340-010-4298-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-010-4298-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liu W. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Wang L. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Li L. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Liu J. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Liu F.-Q Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Wang Z. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 103/3(2011-06-01), 743-747 0946-2171 103:3<743 2011 103 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer