caa a22 4500 445368349 CHVBK 20180317142938.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s00340-011-4378-6 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4378-6 Optical amplification properties of Dy3+-doped Gd2SiO4, Lu2SiO5 and YAl3(BO3)4 single crystals [Elektronische Daten] [P. Haro-González, L. Martín, I. Martín, M. Berkowski, W. Ryba-Romanowski] Comparative investigation of the optical amplification properties of dysprosium doped Gd2SiO5, Lu2SiO5 and YAl3(BO3)4 single crystals was performed in a pump-and-probe experiment. High power laser pulses at 475 nm were used as the pump source in order to strongly populate the 4F9/2 level of the Dy3+ ions due to ground state absorption. Low signal beam cw radiation at 574 nm was used as the probe beam to stimulate the emission associated with the 4F9/2→6H13/2 electronic transition of the Dy3+ ions. The process was modelled as a three levels system, and their populations were analysed and simulated in order to study the gain dynamics. Positive optical gain was observed and compared in these crystals. These results confirmed that among the systems studied the Dy3+-doped YAl3(BO3)4 single crystal can be considered as a good candidate to develop an optical amplifier employing the 4F9/2→6H13/2 transition at around 574 nm which is the first step to consider as laser active media. Springer-Verlag, 2011 Haro-González P. Dpto. de Física Fundamental y Experimental, Electrónica y Sistemas, Universidad de La Laguna, 38206, La Laguna, Tenerife, Spain aut Martín L. Dpto. de Física Fundamental y Experimental, Electrónica y Sistemas, Universidad de La Laguna, 38206, La Laguna, Tenerife, Spain aut Martín I. Dpto. de Física Fundamental y Experimental, Electrónica y Sistemas, Universidad de La Laguna, 38206, La Laguna, Tenerife, Spain aut Berkowski M. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland aut Ryba-Romanowski W. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okolna 2, 50-422, Wroclaw, Poland aut Applied Physics B Springer-Verlag 103/3(2011-06-01), 597-602 0946-2171 103:3<597 2011 103 340 https://doi.org/10.1007/s00340-011-4378-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4378-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Haro-González P. Dpto. de Física Fundamental y Experimental, Electrónica y Sistemas, Universidad de La Laguna, 38206, La Laguna, Tenerife, Spain aut NATIONALLICENCE 700 1- Martín L. Dpto. de Física Fundamental y Experimental, Electrónica y Sistemas, Universidad de La Laguna, 38206, La Laguna, Tenerife, Spain aut NATIONALLICENCE 700 1- Martín I. Dpto. de Física Fundamental y Experimental, Electrónica y Sistemas, Universidad de La Laguna, 38206, La Laguna, Tenerife, Spain aut NATIONALLICENCE 700 1- Berkowski M. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland aut NATIONALLICENCE 700 1- Ryba-Romanowski W. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okolna 2, 50-422, Wroclaw, Poland aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 103/3(2011-06-01), 597-602 0946-2171 103:3<597 2011 103 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer