caa a22 4500 445368624 CHVBK 20180317142939.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s00340-011-4371-0 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4371-0 Intense terahertz emission from undoped GaAs/n-type GaAs andInAs/AlSb structures grown on Si substrates in the transmission-geometry excitation [Elektronische Daten] [E. Estacio, S. Takatori, M. Pham, T. Yoshioka, T. Nakazato, M. Cadatal-Raduban, T. Shimizu, N. Sarukura, M. Hangyo, C. Que, M. Tani, T. Edamura, M. Nakajima, J. Misa, R. Jaculbia, A. Somintac, A. Salvador] Intense terahertz radiation was generated from femtosecond laser-irradiated InAs and GaAs layers on Si substrates. Results show that InAs/Si and GaAs/Si films can be excited in reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but it will be more feasible as a spectroscopic THz source due to the absence of complex spectral features in its emission spectrum. The GaAs/Si emission is characterized by Fabry-Perot oscillations but it is 90% of that of p-InAs bulk crystal emission intensity in the reflection geometry. Excitation fluence measurements showed that the InAs/Si film saturates easily due to the laser's shallow penetration depth in InAs. Springer-Verlag, 2011 Estacio E. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Takatori S. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Pham M. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Yoshioka T. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Nakazato T. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Cadatal-Raduban M. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Shimizu T. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Sarukura N. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Hangyo M. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut Que C. Research Center for Development of Far-Infrared Region, University of Fukui, 910-8507, Fukui, Japan aut Tani M. Research Center for Development of Far-Infrared Region, University of Fukui, 910-8507, Fukui, Japan aut Edamura T. Central Research Laboratory, Hamamatsu Photonics K.K., 434-8601, Hamamatsu, Japan aut Nakajima M. Institute for Solid State Physics, The University of Tokyo, 277-8581, Kashiwa, Chiba, Japan aut Misa J. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Jaculbia R. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Somintac A. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Salvador A. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut Applied Physics B Springer-Verlag 103/4(2011-06-01), 825-829 0946-2171 103:4<825 2011 103 340 https://doi.org/10.1007/s00340-011-4371-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4371-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Estacio E. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Takatori S. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Pham M. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Yoshioka T. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Nakazato T. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Cadatal-Raduban M. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Shimizu T. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Sarukura N. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Hangyo M. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Que C. Research Center for Development of Far-Infrared Region, University of Fukui, 910-8507, Fukui, Japan aut NATIONALLICENCE 700 1- Tani M. Research Center for Development of Far-Infrared Region, University of Fukui, 910-8507, Fukui, Japan aut NATIONALLICENCE 700 1- Edamura T. Central Research Laboratory, Hamamatsu Photonics K.K., 434-8601, Hamamatsu, Japan aut NATIONALLICENCE 700 1- Nakajima M. Institute for Solid State Physics, The University of Tokyo, 277-8581, Kashiwa, Chiba, Japan aut NATIONALLICENCE 700 1- Misa J. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 700 1- Jaculbia R. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 700 1- Somintac A. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 700 1- Salvador A. National Institute of Physics, University of the Philippines, 1101, Diliman Quezon City, Philippines aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 103/4(2011-06-01), 825-829 0946-2171 103:4<825 2011 103 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer