caa a22 4500 445369191 CHVBK 20180317142940.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s00340-011-4431-5 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4431-5 High-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1μm [Elektronische Daten] [Z. Wang, Y. Bo, S. Xie, C. Li, Y. Xu, F. Yang, J. Xu, Q. Peng, J. Zhang, D. Cui, Z. Xu] We demonstrate a high-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1μm. By tuning the tilting angle of a solid etalon in the cavity, the laser can be selectively operated at 1112, 1116 and 1123nm either in continuous-wave (CW) mode or in actively Q-switched (QS) mode, respectively. The highest average CW output powers were 75, 47 and 71W at 1112, 1116 and 1123nm, respectively. The transmittances of the etalon were calculated to analyze the performance of the laser at the three lines. Furthermore, a computational model of a three-wavelength laser based on rate equations was employed to examine the line selectivity of the three lines near 1.1μm at different tilting angles of the etalon. Springer-Verlag, 2011 Wang Z. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Bo Y. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Xie S. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Li C. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Xu Y. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Yang F. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Xu J. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Peng Q. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Zhang J. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Cui D. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Xu Z. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut Applied Physics B Springer-Verlag 104/1(2011-07-01), 45-52 0946-2171 104:1<45 2011 104 340 https://doi.org/10.1007/s00340-011-4431-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4431-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Z. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Bo Y. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Xie S. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Li C. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Xu Y. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Yang F. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Xu J. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Peng Q. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Zhang J. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Cui D. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 700 1- Xu Z. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 104/1(2011-07-01), 45-52 0946-2171 104:1<45 2011 104 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer