caa a22 4500 445369205 CHVBK 20180317142940.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s00340-011-4527-y doi (NATIONALLICENCE)springer-10.1007/s00340-011-4527-y Enhanced photoluminescence in grooved silicon microstructures [Elektronische Daten] [D. Mamichev, E. Konstantinova, E. Astrova, Y. Zharova, V. Timoshenko] Grooved silicon structures formed by anisotropic chemical etching of crystalline silicon (c-Si) wafers in alkaline solution and composed by c-Si walls and voids (grooves) with thicknesses of several micrometers were found to exhibit efficient photoluminescence after excitation with laser radiation at 1.06μm. The photoluminescence emission which originates from the interband radiative recombination of charge carriers in c-Si walls was represented by a broad spectral band centered at 1.1eV. Independently on the polarization direction of the excitation light the photoluminescence of grooved silicon structures was partially linear-polarized with the polarization degree of 0.15-0.24 along c-Si walls and the photoluminescence intensity was strongly enhanced in comparison with that of c-Si substrate. These experimental observations are explained by considering an enhancement of the photoluminescence excitation due to both partial light localization in c-Si walls and a low rate of the non-radiative recombination at surface defects on c-Si walls. The defect density could be modified by additional chemical treatment or thermal annealing, which resulted in significant changes of the photoluminescence intensity of the grooved Si structures. The obtained results are discussed in view of possible applications of grooved Si in optoelectronics and molecular sensorics. Springer-Verlag, 2011 Mamichev D. National Research Center "Kurchatov Institute”, NBIC-Center, Kurchatov Sq., 1, 123182, Moscow, Russia aut Konstantinova E. Physics Department, Lomonosov Moscow State University, 119992, Moscow, Russia aut Astrova E. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021, St.-Petersburg, Russia aut Zharova Y. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021, St.-Petersburg, Russia aut Timoshenko V. Physics Department, Lomonosov Moscow State University, 119992, Moscow, Russia aut Applied Physics B Springer-Verlag 104/1(2011-07-01), 99-104 0946-2171 104:1<99 2011 104 340 https://doi.org/10.1007/s00340-011-4527-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4527-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mamichev D. National Research Center "Kurchatov Institute”, NBIC-Center, Kurchatov Sq., 1, 123182, Moscow, Russia aut NATIONALLICENCE 700 1- Konstantinova E. Physics Department, Lomonosov Moscow State University, 119992, Moscow, Russia aut NATIONALLICENCE 700 1- Astrova E. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021, St.-Petersburg, Russia aut NATIONALLICENCE 700 1- Zharova Y. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021, St.-Petersburg, Russia aut NATIONALLICENCE 700 1- Timoshenko V. Physics Department, Lomonosov Moscow State University, 119992, Moscow, Russia aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 104/1(2011-07-01), 99-104 0946-2171 104:1<99 2011 104 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer