caa a22 4500 445369493 CHVBK 20180317142941.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s00340-010-4284-3 doi (NATIONALLICENCE)springer-10.1007/s00340-010-4284-3 Terahertz transmission characteristics of double wire-grid polarizer on low-loss polyethylene substrate [Elektronische Daten] [D. Tian, X. Dong, Q. Wen, W. Lei, H. Zhang] We fabricated a double metallic wire-grid polarizer consisting of micrometer-pitch Cu grating on both sides of low-loss polyethylene substrate by simple electroplating and lithography micro-processing techniques. The performance of transmission was measured using a terahertz (THz) time domain spectroscopy system. The mixed polarization effects of surface plasmon polaritons in an azimuthally rotated grating were investigated. The polarization dependence of both amplitude and phase shift on frequency was demonstrated in the wide range of 0.1-3 THz, and the extinction ratio is over 22 dB. Springer-Verlag, 2010 Tian D. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Dong X. Belie College of Engineering and Technology, Lanzhou City University, 730070, Lanzhou, People's Republic of China aut Wen Q. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Lei W. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Zhang H. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Applied Physics B Springer-Verlag 104/1(2011-07-01), 125-130 0946-2171 104:1<125 2011 104 340 https://doi.org/10.1007/s00340-010-4284-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-010-4284-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tian D. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Dong X. Belie College of Engineering and Technology, Lanzhou City University, 730070, Lanzhou, People's Republic of China aut NATIONALLICENCE 700 1- Wen Q. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Lei W. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Zhang H. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 104/1(2011-07-01), 125-130 0946-2171 104:1<125 2011 104 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer