caa a22 4500 445369833 CHVBK 20180317142942.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s00340-011-4477-4 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4477-4 High-efficiency mid-infrared laser from synchronous optical parametric oscillation and amplification based on a single MgO:PPLN crystal [Elektronische Daten] [X. Wei, Y. Peng, W. Wang, X. Chen, D. Li] This paper presents a specially designed optical parametric oscillator (OPO) which achieved high-efficiency mid-infrared laser of 2.83μm. The cascaded nonlinear interactions of OPO and optical parametric amplifier (OPA) were simultaneously realized in a single MgO:PPLN crystal. The signal oscillation of 1.70μm was used to pump a secondary parametric process that resulted in amplification of the idler laser of 2.83μm. When the MgO:PPLN crystal with a grating period of 31.2μm was pumped by a 1.064μm laser and operated at 148°C, the quasi-phase-matching of both OPO and OPA could be simultaneously achieved. Average output power of 7.68W at 2.83μm was obtained for 25W of pump at 7kHz. The power conversion efficiency of 2.83μm laser was 30.7%, which was evidently higher than common OPOs. Springer-Verlag, 2011 Wei X. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut Peng Y. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut Wang W. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut Chen X. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut Li D. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut Applied Physics B Springer-Verlag 104/3(2011-09-01), 597-601 0946-2171 104:3<597 2011 104 340 https://doi.org/10.1007/s00340-011-4477-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4477-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wei X. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut NATIONALLICENCE 700 1- Peng Y. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut NATIONALLICENCE 700 1- Wang W. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut NATIONALLICENCE 700 1- Chen X. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut NATIONALLICENCE 700 1- Li D. Institute of Applied Electronics, China Academy of Engineering Physics, P. O. Box 919-1013, 621900, Mianyang, Sichuan, China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 104/3(2011-09-01), 597-601 0946-2171 104:3<597 2011 104 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer