caa a22 4500 445369884 CHVBK 20180317142943.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s00340-011-4596-y doi (NATIONALLICENCE)springer-10.1007/s00340-011-4596-y Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process [Elektronische Daten] [T. Kawazoe, M. Mueed, M. Ohtsu] We fabricated a highly efficient, broadband light emitting diode driven by an optical near field generated at the inhomogeneous domain boundary of a dopant in a homojunction bulk Si crystal and evaluated its performance. To fabricate this device, a forward current was made to flow through a Si p-n junction to anneal it. During this process, the device was irradiated with near-infrared light, producing stimulated-emission light using a two-step phonon-assisted process triggered by the optical near field, and the annealing rate was controlled in a self-organized manner. The device emitted light in a wide photon energy region of 0.73-1.24eV (wavelength 1.00-1.70μm). The total power of the emitted light with 11W of electrical input power was as high as 1.1W. The external power conversion efficiency of the emitted light was 1.3%, the differential external power conversion efficiency was 5.0%, the external quantum efficiency was 15%, and the differential external quantum efficiency was 40%. The dependency of the emitted light power density on the injected current density clearly showed a characteristic reflecting the two-step phonon-assisted transition process. The Author(s), 2011 Kawazoe T. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, 113-8656, Bunkyo-ku, Tokyo, Japan aut Mueed M. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, 113-8656, Bunkyo-ku, Tokyo, Japan aut Ohtsu M. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, 113-8656, Bunkyo-ku, Tokyo, Japan aut Applied Physics B Springer-Verlag 104/4(2011-09-01), 747-754 0946-2171 104:4<747 2011 104 340 https://doi.org/10.1007/s00340-011-4596-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4596-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kawazoe T. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, 113-8656, Bunkyo-ku, Tokyo, Japan aut NATIONALLICENCE 700 1- Mueed M. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, 113-8656, Bunkyo-ku, Tokyo, Japan aut NATIONALLICENCE 700 1- Ohtsu M. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, 113-8656, Bunkyo-ku, Tokyo, Japan aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 104/4(2011-09-01), 747-754 0946-2171 104:4<747 2011 104 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer