caa a22 4500 445370092 CHVBK 20180317142943.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s00340-011-4462-y doi (NATIONALLICENCE)springer-10.1007/s00340-011-4462-y High electro-to-optical efficiency 180 W Q-switched 532 nm laser with a pulsewidth of 70 ns [Elektronische Daten] [S. Zhang, L. Guo, B. Xiong, Y. Liu, W. Hou, X. Lin, J. Li] A compact straight cavity with two side-pumped Nd:YAG laser heads and a 90° quartz rotator in between is presented. By intracavity-frequency-doubling with a type II LBO crystal in this cavity, an output power of 180.2 W at 532 nm with a repetition rate of 10 kHz was achieved, corresponding to an electrical-to-optical efficiency of 10.9%. To best of our knowledge, this is the highest electrical-to-optical efficiency of the high power green lasers with above 100 W output power, ever reported. The pulsewidth was 70ns and the peak power was 257.4 kW. The beam parameter product (beam waist multiplied by half beam divergence angle) was estimated to be 4.2mm mrad and the power fluctuation over 2.5 hours was calculated to be better than ±1.2%. Springer-Verlag, 2011 Zhang S. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Guo L. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Xiong B. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Liu Y. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Hou W. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Lin X. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Li J. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Applied Physics B Springer-Verlag 104/4(2011-09-01), 861-866 0946-2171 104:4<861 2011 104 340 https://doi.org/10.1007/s00340-011-4462-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4462-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang S. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Guo L. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Xiong B. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Liu Y. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Hou W. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Lin X. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Li J. Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 104/4(2011-09-01), 861-866 0946-2171 104:4<861 2011 104 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer