caa a22 4500 445370165 CHVBK 20180317142943.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s00340-011-4682-1 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4682-1 First comparison of electric field induced second harmonic of near-infrared femtosecond laser pulses in reflection and transmission generated from Si/SiO2 interfaces of a silicon membrane [Elektronische Daten] [G. Nyamuda, E. Rohwer, C. Steenkamp, H. Stafast] For the first time electric field induced second harmonic (EFISH) generation of femtosecond (fs) laser pulses (λ=800nm, τ=75±5 fs, rep. rate=80MHz, E pulse≤10nJ) is observed in transmission through a thin free-standing silicon (Si) membrane of 10-μm thickness and compared to the well-known EFISH results in reflection by use of the z-scan technique. EFISH in reflection and transmission unequivocally originate from the front and rear Si/SiO2 interfaces, respectively, with SiO2 being the natural oxide on the Si surfaces. Frequency conversion is enhanced by photoinduced electric fields across the Si/SiO2 interfaces caused by charge-carrier injection from Si into the oxide. The z-scan results and time-dependent measurements allow comparison of the EFISH signal amplitudes and time constants detected in transmission and reflection, demonstrating the need for further investigation. Springer-Verlag, 2011 Nyamuda G. Laser Research Institute, Physics Department, Stellenbosch University, P. Bag X1, 7602, Matieland, South Africa aut Rohwer E. Laser Research Institute, Physics Department, Stellenbosch University, P. Bag X1, 7602, Matieland, South Africa aut Steenkamp C. Laser Research Institute, Physics Department, Stellenbosch University, P. Bag X1, 7602, Matieland, South Africa aut Stafast H. Institute of Photonic Technology, P. O. Box 100239, 07702, Jena, Germany aut Applied Physics B Springer-Verlag 104/4(2011-09-01), 735-740 0946-2171 104:4<735 2011 104 340 https://doi.org/10.1007/s00340-011-4682-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4682-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Nyamuda G. Laser Research Institute, Physics Department, Stellenbosch University, P. Bag X1, 7602, Matieland, South Africa aut NATIONALLICENCE 700 1- Rohwer E. Laser Research Institute, Physics Department, Stellenbosch University, P. Bag X1, 7602, Matieland, South Africa aut NATIONALLICENCE 700 1- Steenkamp C. Laser Research Institute, Physics Department, Stellenbosch University, P. Bag X1, 7602, Matieland, South Africa aut NATIONALLICENCE 700 1- Stafast H. Institute of Photonic Technology, P. O. Box 100239, 07702, Jena, Germany aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 104/4(2011-09-01), 735-740 0946-2171 104:4<735 2011 104 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer