caa a22 4500 44537053X CHVBK 20180317142945.0 cr unu---uuuuu 170323e20111001xx s 000 0 eng 10.1007/s00340-011-4615-z doi (NATIONALLICENCE)springer-10.1007/s00340-011-4615-z Light-induced charge-transport in undoped LiNbO3 crystals [Elektronische Daten] [F. Lüdtke, N. Waasem, K. Buse, B. Sturman] Light-induced charge transport in nominally undoped LiNbO3 crystals essentially differs from that in Fe- and Cu-doped crystals. Furthermore, it is of relevance for numerous effects ranging from optical damage to domain reversal. Here, we review the state of the art of the studies of light-induced charge transport in this important material. This includes a summary of the facts known for doped crystals, a description of the experimental methods relevant to undoped crystals, a summary of the main experimental data for this material, especially the data on the intensity dependences, presentation of the methods of purification from unwanted photo-active electrons, and a discussion of possible mechanisms responsible for the charge-transport peculiarities. Springer-Verlag, 2011 Lüdtke F. Institute of Physics, University of Bonn, Wegelerstraße 8, 53115, Bonn, Germany aut Waasem N. Institute of Physics, University of Bonn, Wegelerstraße 8, 53115, Bonn, Germany aut Buse K. Institute of Microsystem Technology, University of Freiburg, Georges-Köhler-Allee 102, 79110, Freiburg, Germany aut Sturman B. Institute of Automation and Electrometry of RAS, 630090, Novosibirsk, Russia aut Applied Physics B Springer-Verlag 105/1(2011-10-01), 35-50 0946-2171 105:1<35 2011 105 340 https://doi.org/10.1007/s00340-011-4615-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4615-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lüdtke F. Institute of Physics, University of Bonn, Wegelerstraße 8, 53115, Bonn, Germany aut NATIONALLICENCE 700 1- Waasem N. Institute of Physics, University of Bonn, Wegelerstraße 8, 53115, Bonn, Germany aut NATIONALLICENCE 700 1- Buse K. Institute of Microsystem Technology, University of Freiburg, Georges-Köhler-Allee 102, 79110, Freiburg, Germany aut NATIONALLICENCE 700 1- Sturman B. Institute of Automation and Electrometry of RAS, 630090, Novosibirsk, Russia aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 105/1(2011-10-01), 35-50 0946-2171 105:1<35 2011 105 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer