caa a22 4500 445370904 CHVBK 20180317142946.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s00340-011-4711-0 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4711-0 Optimization of Yb:YAG/Cr4+:YAG composite ceramics passively Q-switched microchip lasers [Elektronische Daten] [J. Ma, J. Dong, K.-i. Ueda, A. Kaminskii] The laser characteristics of laser-diode end-pumped Yb:YAG/Cr4+:YAG composite ceramics microchip passively Q-switched lasers were studied by solving the coupled rate equations numerically taking into account the reabsorption of Yb:YAG ceramics at laser wavelength. Effects of the reflectivity of the output coupler, the concentrations and thickness of the saturable absorbers, and pump beam area on the laser performance were investigated analytically. The simulation results of the Yb:YAG/Cr4+:YAG composite ceramics passively Q-switched microchip lasers were in good agreement with the experimental data. Better laser performance (high peak power, short pulse width and good optical-to-optical efficiency) of the composite Yb:YAG/Cr4+:YAG ceramics passively Q-switched laser can be obtained by using a thin Cr4+:YAG ceramic with high concentration, suitable reflectivity of the output coupler and proper pump beam diameter under high pump power intensity according to our simulations. Springer-Verlag, 2011 Ma J. Department of Electronics Engineering, School of Information Science and Technology, Xiamen University, 361005, Xiamen, P.R. China aut Dong J. Department of Electronics Engineering, School of Information Science and Technology, Xiamen University, 361005, Xiamen, P.R. China aut Ueda K.-i Institute for Laser Science, University of Electro-communications, 1-5-1 Chofugaoka, Chofu, 182-8585, Tokyo, Japan aut Kaminskii A. Institute of Crystallography, Russian Academy of Sciences, Leninsky Prospekt 59, 119333, Moscow, Russia aut Applied Physics B Springer-Verlag 105/4(2011-12-01), 749-760 0946-2171 105:4<749 2011 105 340 https://doi.org/10.1007/s00340-011-4711-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4711-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ma J. Department of Electronics Engineering, School of Information Science and Technology, Xiamen University, 361005, Xiamen, P.R. China aut NATIONALLICENCE 700 1- Dong J. Department of Electronics Engineering, School of Information Science and Technology, Xiamen University, 361005, Xiamen, P.R. China aut NATIONALLICENCE 700 1- Ueda K.-i Institute for Laser Science, University of Electro-communications, 1-5-1 Chofugaoka, Chofu, 182-8585, Tokyo, Japan aut NATIONALLICENCE 700 1- Kaminskii A. Institute of Crystallography, Russian Academy of Sciences, Leninsky Prospekt 59, 119333, Moscow, Russia aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 105/4(2011-12-01), 749-760 0946-2171 105:4<749 2011 105 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer