caa a22 4500 445371307 CHVBK 20180317142947.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s00340-011-4708-8 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4708-8 A stochastic modeling of morphology formation by optical near-field processes [Elektronische Daten] [M. Naruse, T. Kawazoe, T. Yatsui, N. Tate, M. Ohtsu] We previously reported (S. Yukutake et al. in Appl. Phys. B 99:415, 2010) that by depositing Ag particles on the electrode of a photovoltaic device composed of poly(3-hexylthiophene) (P3HT) and ZnO under light illumination (wavelength λ=660nm) while reversely biasing the P3HT/ZnO p-n junction, a unique granular Ag film was formed. The resultant device generated a photocurrent at wavelengths as long as 670nm, which is longer than the long-wavelength cutoff λ c (=570nm) of P3HT. Such an effect originates from a phonon-assisted process induced by an optical near field. In this paper, we analyze the morphological character of the Ag clusters and build a stochastic model in order to understand the principles behind the self-organized pattern formation process. The modeling includes the geometrical character of the material, its associated optical near fields, and the materials that flow in and out of the system. The model demonstrates behavior consistent with that observed in the experiment. We can see these phenomena as a new kind of self-organized criticality taking account of near-field effects, which will provide an insight into the analysis and design of future nanophotonic devices. Springer-Verlag, 2011 Naruse M. National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, 184-8795, Tokyo, Japan aut Kawazoe T. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut Yatsui T. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut Tate N. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut Ohtsu M. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut Applied Physics B Springer-Verlag 105/2(2011-11-01), 185-190 0946-2171 105:2<185 2011 105 340 https://doi.org/10.1007/s00340-011-4708-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4708-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Naruse M. National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, 184-8795, Tokyo, Japan aut NATIONALLICENCE 700 1- Kawazoe T. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut NATIONALLICENCE 700 1- Yatsui T. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut NATIONALLICENCE 700 1- Tate N. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut NATIONALLICENCE 700 1- Ohtsu M. Nanophotonics Research Center, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656, Tokyo, Japan aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 105/2(2011-11-01), 185-190 0946-2171 105:2<185 2011 105 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer