caa a22 4500 44537151X CHVBK 20180317142948.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s00340-011-4672-3 doi (NATIONALLICENCE)springer-10.1007/s00340-011-4672-3 Systematic investigation of silicon digital 1×2 electro-optic switch based on a microdisk resonator through carrier injection [Elektronische Daten] [Q. Huang, X. Zhang, J. Xia, J. Yu] We perform a systematic investigation on the silicon digital 1×2 electro-optic switch based on a microdisk resonator with the refractive index tuned by carrier injection and extraction. Analytical expressions are proposed to quantify the crosstalk, insertion loss and switching time, and then they are used to analyze the effect of the coupling-in/out coefficient, internal loss, and quality factor. Both electron beam lithography and photolithography were employed to construct the asymmetrically coupled microdisk resonator integrated with a p-i-n diode. A high-performance switch has been demonstrated with a crosstalk of less than −20dB, a switching time of ∼2ns, as well as a power consumption of 0.46mW. Moreover, the switching of optical signals with high data rates has been characterized and analyzed under different working conditions. Springer-Verlag, 2011 Huang Q. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Zhang X. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Xia J. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Yu J. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Applied Physics B Springer-Verlag 105/2(2011-11-01), 353-361 0946-2171 105:2<353 2011 105 340 https://doi.org/10.1007/s00340-011-4672-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4672-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Huang Q. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 700 1- Zhang X. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 700 1- Xia J. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 700 1- Yu J. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 105/2(2011-11-01), 353-361 0946-2171 105:2<353 2011 105 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer