caa a22 4500 445371595 CHVBK 20180317142948.0 cr unu---uuuuu 170323e20110101xx s 000 0 eng 10.1007/s00340-010-4274-5 doi (NATIONALLICENCE)springer-10.1007/s00340-010-4274-5 Characteristics of Bragg gratings written into active Er-doped fibers with800nm femtosecond radiation [Elektronische Daten] [N. Liu, Y. Li, J. Shi, T. Ren, P. Lu] Fiber Bragg gratings have been successfully written into single-mode active Er-doped fibers by use of 800nm femtosecond radiation through a phase mask, and characteristics of these induced gratings have been investigated. Regeneration was observed during the inscription and possible reasons have been discussed. Isochronal annealing tests show that Bragg gratings written in H2-free Er-doped fibers can sustain temperatures higher than 750°C, while those written in H2-loaded Er-doped fibers can sustain temperatures up to 450°C when they can still maintain a high reflectivity. The typical responses of Bragg wavelengths to temperature and strain have also been studied. These demonstrate the real potential of such gratings to be developed as the ideal elements for compact fiber laser systems and fiber sensor applications with high reliability. Springer-Verlag, 2010 Liu N. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Li Y. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Shi J. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Ren T. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Lu P. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut Applied Physics B Springer-Verlag 102/1(2011-01-01), 73-79 0946-2171 102:1<73 2011 102 340 https://doi.org/10.1007/s00340-010-4274-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-010-4274-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liu N. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 700 1- Li Y. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 700 1- Shi J. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 700 1- Ren T. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 700 1- Lu P. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, P.R. China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 102/1(2011-01-01), 73-79 0946-2171 102:1<73 2011 102 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer