caa a22 4500 445371870 CHVBK 20180317142950.0 cr unu---uuuuu 170323e20110101xx s 000 0 eng 10.1007/s00340-010-4144-1 doi (NATIONALLICENCE)springer-10.1007/s00340-010-4144-1 A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface [Elektronische Daten] [A. Galmed, A. Kassem, H. Von Bergmann, M. Harith] Metals and metal alloys are usually employed as interconnections to guide electrical signals between components into the very large scale integrated (VLSI) devices. These devices demand higher complexity, better performance and lower cost. Thin film is a common geometry for these metallic applications, requiring a substrate for rigidity. Accurate depth profile analysis of coatings is becoming increasingly important with expanding industrial use in technological fields. A number of articles devoted to LIBS applications for depth-resolved analysis have been published in recent years. In the present work, we are studying the ability of femtosecond LIBS to make depth profiling for a Ti thin film of thickness 213nm deposited onto a silicon (100) substrate before and after thermal annealing. The measurements revealed that an average ablation rates of 15nm per pulse have been achieved. The thin film was examined using X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM), while the formation of the interface was examined using Rutherford Back Scattering (RBS) before and after annealing. To verify the depth profiling results, a theoretical simulation model is presented that gave a very good agreement with the experimental results. Springer-Verlag, 2010 Galmed A. National Institute of Laser Enhanced Science (NILES), Cairo University, Cairo, Egypt aut Kassem A. National Institute of Laser Enhanced Science (NILES), Cairo University, Cairo, Egypt aut Von Bergmann H. Laser Research Institute (LRI), Physics Department, University of Stellenbosch, Stellenbosch, South Africa aut Harith M. National Institute of Laser Enhanced Science (NILES), Cairo University, Cairo, Egypt aut Applied Physics B Springer-Verlag 102/1(2011-01-01), 197-204 0946-2171 102:1<197 2011 102 340 https://doi.org/10.1007/s00340-010-4144-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-010-4144-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Galmed A. National Institute of Laser Enhanced Science (NILES), Cairo University, Cairo, Egypt aut NATIONALLICENCE 700 1- Kassem A. National Institute of Laser Enhanced Science (NILES), Cairo University, Cairo, Egypt aut NATIONALLICENCE 700 1- Von Bergmann H. Laser Research Institute (LRI), Physics Department, University of Stellenbosch, Stellenbosch, South Africa aut NATIONALLICENCE 700 1- Harith M. National Institute of Laser Enhanced Science (NILES), Cairo University, Cairo, Egypt aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 102/1(2011-01-01), 197-204 0946-2171 102:1<197 2011 102 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer